ISSN: 1673-825X    Imprint: Chongqing University of Posts and Telecommunications Journal
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C-V characteristics of 6H-SiC buried-channel MOSFET
Received:June 12, 2008  
中文关键词:SiC  埋沟MOSFET  C-V特性  界面态
英文关键词:silicon carbide (SiC)  buried channel MOSFET  C-V characteristic  interface states
Author NameAffiliation
WANG Yu-qing, WANG Wei, SHEN Jun-jun College of Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, P. R. China 
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      The C-V characteristics of the 6H-SiC buried-channel MOSFET analytical model was investigated, and the C-V relationships in each model, such as accumulation, inversion, depletion and pinch off, were simulated. The C-V characteristics in depletion model and pinch off model were analyzed, and the effect of the interface states on SiO2/SiC interface and pn junction was considered in the analytical model. The assumption of uniform distribution for interface state was used in order to simplify the theoretical model. Finally the numerical results were compared with the experimental result, and the causes for difference between the two results were analyzed.
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