ISSN: 1673-825X    Imprint: Chongqing University of Posts and Telecommunications Journal
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6H-SiC埋沟MOSFET的C-V特性研究
C-V characteristics of 6H-SiC buried-channel MOSFET
DOI:10.3979/j.issn.1673-825X.2009.01.018
Received:June 12, 2008  
中文关键词:SiC  埋沟MOSFET  C-V特性  界面态
英文关键词:silicon carbide (SiC)  buried channel MOSFET  C-V characteristic  interface states
基金项目:重庆市科委自然科学基金项目(CSTC,2006BB2364)
Author NameAffiliation
WANG Yu-qing, WANG Wei, SHEN Jun-jun College of Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, P. R. China 
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中文摘要:
      研究了6H-SiC埋沟MOSFET器件的电容-电压解析模型,分析了埋沟MOSFET各种工作模式下的电容与电压之间的关系。在建模过程中考虑了SiO2/SiC界面态及PN结的影响,并仿真分析了耗尽模式、夹断模式下器件总的C-V特性的模型。由于在假设界面态密度分布均匀条件下,对界面态做了简化处理,因而计算结果与实验结果有所差异。
英文摘要:
      The C-V characteristics of the 6H-SiC buried-channel MOSFET analytical model was investigated, and the C-V relationships in each model, such as accumulation, inversion, depletion and pinch off, were simulated. The C-V characteristics in depletion model and pinch off model were analyzed, and the effect of the interface states on SiO2/SiC interface and pn junction was considered in the analytical model. The assumption of uniform distribution for interface state was used in order to simplify the theoretical model. Finally the numerical results were compared with the experimental result, and the causes for difference between the two results were analyzed.
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